EFFECTS OF La DOPING ON FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS

La modified CBTi (CLBTi) thin films were prepared on Pt/Ti/SiO2/Si(100) substrates by a sol–gel technique. X-ray diffraction analysis showed that single phase of CLBTi thin films were obtained. Their crystallization and hysteresis behavior were strongly dependent on the La contents. An increase of 2Pr as well as a decrease of 2Ec with the increase of La concentration were observed. The leakage properties of CBTi thin films were found to be improved by the La doping. The results were discussed with respect to the effects of La3+ substitution at perovskite A-site.