HETEROEPITAXIAL GROWTH OF STRESS FREE SINGLE CRYSTAL PEROVSKITE THIN FILMS

Thin films of single c-domain/single crystal (PbMg1/3Nb2/3O3)1-x(PbTiO3)x, x = 0–0.4 (PMNT) were heteroepitaxially grown on (001)SrTiO3 and (001)MgO substrates by magnetron sputtering using a quenching process. The lattice parameters of the quenched PMNT thin films were almost the same to the bulk values independently to the lattice parameters of substrates. The quenched PMNT thin films showed stress free structural properties, although the crystal structure of thin films is modified from bulk PMNT. The electromechanical properties are the same to the bulk single c-domain single crystals.