HOMO-EPITAXIAL GROWTH ON ZnO SUBSTRATE BY MO-CVD USING (C5H7O2)2
High quality homo-epitaxial ZnO films were grown on Zn-terminated surfaces of ZnO (0001) single-crystal substrates with high-temperature annealing and Ar+ ion etching. These films were prepared by low-pressure MO-CVD using zinc acetylacetonate (C5H7O2)2 and oxygen as source materials. High quality ZnO (0001) substrate was synthesized by the hydrothermal technique. The atomically flat surface without scratches was obtained by high temperature annealing at 800°C–1300°C in oxygen atmosphere. Ar+ ion etching for the surface of ZnO substrates was critically important to the growth of ZnO films with good crystallinity. The epitaxial film and the ZnO substrate were characterized using reflection high-energy electron diffraction, atomic force microscope, and X-ray photoelectron spectroscopy.
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|Authors:||HAGA, KOICH ; SHISHIDO, TOETSU ; NAKAJIMA, KAZUO ; MATSUNAGA, TAKAHIRO|
Surface Review and Letters (SRL). - World Scientific Publishing Co. Pte. Ltd., ISSN 1793-6667. - Vol. 14.2007, 04, p. 783-787
World Scientific Publishing Co. Pte. Ltd.
|Type of publication:||Article|
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