IN SITU EXAMINATIONS OF MECHANICAL DICING-INDUCED DAMAGE IN SEMICONDUCTOR WAFERS
This work illustrates how the separation of a semiconductor wafer into individual devices occurs during conventional mechanical dicing. In situ examinations indicate that the final separation of the wafer takes place before the dicing blade has fully penetrated its active surface. Thus, it was predicted that mechanical dicing-induced damage in the separated device patterns would be due to other mechanical actions rather than the grinding action between the diamond particles embedded in the blade and the wafer. Based on the in situ examinations, it was experimentally tested how manipulating the revolving speed of the dicing blade affected the prevention of dicing-induced damage to device patterns. The experimental results show that among various mechanical actions, the impact stress due to the revolving action of the blade could be the most possible candidate for damage in the device pattern on the final uncut semiconductor wafer.
Year of publication: |
2010
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Authors: | LEE, SEONG-MIN |
Published in: |
Surface Review and Letters (SRL). - World Scientific Publishing Co. Pte. Ltd., ISSN 1793-6667. - Vol. 17.2010, 03, p. 317-321
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Publisher: |
World Scientific Publishing Co. Pte. Ltd. |
Subject: | Silicon wafer | device pattern | sawing blade | dicing | crack |
Saved in:
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