Increasing the Gas Response for Solution-Processed Amorphous Ingazno Gas Sensors by Tuning the Size of the Nanostructure

The electrical performance of solution-processed a-IGZO thin-film transistors is significantly increased by adding acetylacetone (acac) to the precursor solution. However, the effect of the additive on the performance of gas sensors is unclear. This study uses acac as an additive to control the size of the nanostructure of solution-processed a-IGZO for ozone (O 3 ) gas sensor applications. Adding acac significantly increases the number of oxygen vacancies within an a-IGZO film so more electrons are available for reaction with the gas. The increased number of oxygen vacancies means that more dangling bonds are created, which activates the gas adsorption process. Therefore, the device performance is significantly improved. A gas response of 19 and a response/recovery time of 80/120 s are achieved for exposure to 5 ppm O3. This method allows easy fabrication of a high-performance gas sensor that uses a-IGZO as a sensing layer