PREPARATION OF (100)- AND (110)-ORIENTED LaNiO3 THIN FILMS BY CHEMICAL SOLUTION DEPOSITION

LaNiO3(LNO) thin films were prepared on Si(100) substrates by a chemical solution deposition method. The orientation of LNO films was controlled by changing the acetic acid amount, concentration of the precursor solutions and pre-annealing time. The highly (100)- and (110)-oriented LNO films were obtained by optimizing these processing conditions. The orientation factors of the optimized (100)- and (110)-oriented LNO films were more than 0.99 and 0.93. Their room-temperature resistivities were 5.1 × 10-4Ωcm and 5.4 × 10-4Ωcm, respectively. The growth mechanisms of the (110)- and (100)-oriented LNO films were discussed.