STUDY OF THE SYNTHESIS AND FIELD EMISSION CHARACTERISTICS OF ONE-DIMENSIONAL GaN NANOSTRUCTURES

The chemical vapor deposition (CVD) process has been used to synthesize gallium nitride (GaN) nanostructures using Pt-coated n-type Si(100) as the substrate, and NH3 gas and Ga2O3 powder as the reaction agents. The surface morphologies of the prepared GaN nanostructures obtained by field emission scanning electron microscopy (FE-SEM) show a large number of GaN nanowires and nanorods on the Si substrates. The synthesized nanostructures are hexagonal as determined from XRD analysis and show a turn-on field of 5 v/μm at 10 μA/cm2.