THE ELECTRIC FIELD DEPENDENCE OF THE PHOTOIONIZATION CROSS-SECTION OF SHALLOW DONOR IMPURITIES IN QUANTUM DOTS: INFINITE AND FINITE MODEL

Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photoionization cross-section on the electric field, the size of the quantum dot and the impurity position.

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Year of publication:	2006
Authors:	KASAPOGLU, E. ; SARI, H. ; YESILGUL, U. ; SÖKMEN, I.
Published in:	Surface Review and Letters (SRL). - World Scientific Publishing Co. Pte. Ltd., ISSN 1793-6667. - Vol. 13.2006, 06, p. 747-752
Publisher:	World Scientific Publishing Co. Pte. Ltd.
Subject:	Photoionization \| quantum dot \| donor impurity \| 71.55.Eq \| 71.55.-I \| 78.67.Hc

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Extent:	application/pdf text/html
Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10004971863