An Interpretation of Discrete Switching in Small-Area Semiconductors

In a small-area semiconductor the activity of just one single trap reveals discrete switching, which is usually referred to as a random telegraph signal (RTS). Such RTSs are attributed to the capture and emission of charge carriers by a single active trap located in an oxide layer. This activity can alternatively be interpreted as a random succession of g-r pulses. The time intervals between heads of successive g-r pulses are determined by the time constants of the empty and occupied trap. This suggests that the g-r pulse train due to a single trap is described by a renewal process. We derive the power spectrum of the g-r pulse train for an underlying renewal process. The probability of an overlap of successive g-r pulses is calculated, and the distribution of up-and-down times of non-overlapping g-r pulses is estimated by simulating g-r pulse trains. To check our results against empirical findings, we suggest estimating the distribution of the time intervals between the heads of successive g-r pulses