Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling

We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011