C-Si Bonds 2dhg Diamond Mosfet; Normally-Off Characteristics at Low Temperatures (10 K) and Wide Temperature Stability (10-573 K)

C-Si bonds are formed by boron-doped selective growth at the diamond-SiO 2 interface. Two-dimensional hole gas (2DHG) C-Si diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) using C-Si bonded have low interfacial density of states and high hole mobility can be expected. C-Si diamond MOSFET have properties comparable to 2DHG hydrogen-terminated (C-H) diamond MOSFET. In addition, since the C-Si diamond MOSFETs uses a SiO 2 insulating film, it is expected to be more practical than the C-H MOSFET. This time, the SiO 2 gate oxide film of the C-Si bonded diamond MOSFET was made thin from the conventional 200 nm to 100 nm. As a result, at 300 K, the maximum drain current density of the C-Si diamond MOSFET normalized by the gate width (25 μm) is -108 mA / mm at V DS -30V and V GS -40 V, and the peak transconductance is 5.1 S.mm. Maximum field effect mobility (μ EF ) is 234cm 2 V -1 s -1 . In addition, C-Si MOSFETs exhibit normally-off operation at a threshold voltage of V th = -0.9 V. This value is comparable to that of the C-H diamond MOSFET. After that, at low temperatures, the absolute threshold has improved. At high temperatures, the drain current density increased at high temperatures. In addition, C-Si diamond MOSFETs achieved temperature stability over a wide temperature range (10-573K)