DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS
Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.
|Year of publication:||
|Authors:||SELLAI, A. ; MAMOR, M. ; AL-HARTHI, S.|
Surface Review and Letters (SRL). - World Scientific Publishing Co. Pte. Ltd., ISSN 1793-6667. - Vol. 14.2007, 04, p. 765-768
World Scientific Publishing Co. Pte. Ltd.
|Subject:||Schottky barrier | interface states | capacitance spectroscopy|
|Type of publication:||Article|
Persistent link: https://www.econbiz.de/10004977533
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