Effect of Localized States on the Optical Properties in Ingaas/Gaas Multiple Quantum Wells Grown by Mocvd

The InGaAs/GaAs multiple quantum wells (MQWs), as the most commonly used semiconductor laser epitaxial material, have important optical properties and wide application. However, the segregation of In atom in the MQWs with high In component always is a serious problem. In this paper, the In 0.29 Ga 0.71 As/GaAs MQWs were prepared by metal-organic chemical vapor deposition (MOCVD), and the temperature and excitation power-dependent photoluminescence spectra of MQWs were studied. In the variable temperature test, the position peak of PL and full width at half maxima (FWHM) showed an "S"-shaped change from 20 to 300 K. Our systematic theoretical and experimental studies were performed that the peak before 50 K was considered to be the lasing caused by the localized states playing a leading role. And the α parameter value obtained by the fitting using the theoretical formula was less than 1, which also proved the existence of the local state at low temperature in the variable power test at a fixed temperature. Meanwhile, the local state between InGaAs and GaAs was considered be played a leading role. Through this research, it is of great significance to comprehensively understand the radiation emission mechanism in InGaAs materials and further develop the epitaxial growth of InGaAs quantum wells, and can deepen the understanding of the luminescence properties of InGaAs quantum well materials