Effects of vacuum annealing on the transport property of La <InlineEquation ID="Equ1"> <EquationSource Format="TEX">$\mathsf{_{0.67}}$</EquationSource> </InlineEquation>Sr <InlineEquation ID="Equ2"> <EquationSource Format="TEX">$\mathsf{_{0.33}}$</EquationSource> </InlineEquation>MnO <InlineEquation ID="Equ3"> <EquationSource Format="TEX">$\mathsf{_{3-\delta}}$</EquationSource> </InlineEquation> ...

Effects of oxygen content on the transport behavior of epitaxial La<Subscript>2/3</Subscript>Sr <Subscript>1/3</Subscript>MnO<InlineEquation ID="Equ4"> <EquationSource Format="TEX">$_{3-\delta}$</EquationSource> </InlineEquation> films on (110) NdGaO<Subscript>3</Subscript> and (001) SrTiO<Subscript>3</Subscript> substrates have been experimentally studied. A quantitative relation between the temperature of metal-to-insulator transition (T <Subscript> p </Subscript>) and the content of oxygen vacancies is established, and it is found that oxygen non-stoichiometry causes a monotonic decrease of T <Subscript> p </Subscript>. A comparison to crystals La<Subscript>1-x </Subscript>Sr<Subscript> x </Subscript>MnO<Subscript>3</Subscript> indicates that the reduction of hole concentration due to the incorporation of anionic vacancies dominates the variation of T <Subscript> p </Subscript>, while the vacancies themselves influence the detailed features of the T <Subscript> p </Subscript>-<InlineEquation ID="Equ5"> <EquationSource Format="TEX">$\delta $</EquationSource> </InlineEquation> dependence. Strain in the film affects the effects of oxygen deficiency, and the metal-to-insulator transition disappears at a smaller <InlineEquation ID="Equ6"> <EquationSource Format="TEX">$\delta $</EquationSource> </InlineEquation> value in tensily stressed films. In the temperature region above T <Subscript> p </Subscript>, oxygen vacancies affect the resistive behavior of the films mainly by modulating the content of Mn<Superscript>4 + </Superscript>. In contrast, extra effects due to the scattering of oxygen vacancies become important at low temperatures, causing an exponential increase of resistivity with <InlineEquation ID="Equ7"> <EquationSource Format="TEX">$\delta $</EquationSource> </InlineEquation>. A further analysis indicates that oxygen deficiency enhances magnetic scattering, and leads to a resistivity upturn of the form <InlineEquation ID="Equ8"> <EquationSource Format="TEX">$-\ln(T)$</EquationSource> </InlineEquation> when <InlineEquation ID="Equ9"> <EquationSource Format="TEX">$\delta $</EquationSource> </InlineEquation> is significant. Copyright Springer-Verlag Berlin/Heidelberg 2003