FABRICATION AND PROPERTIES OF La0.8Ca0.2 MnO3 FIELD EFFECT TRANSISTORS

The inverted-gate colossal magnetoresistance-field-effect-transistors (CMR-FETs) were designed and successfully fabricated on the Si substrate by using semiconductor techniques. The studies on the capacitance properties were carried out under different temperatures, different frequencies, and different gate biases. The results indicate that La0.8Ca0.2MnO3 is the typical p-type semiconductor. It was shown that the capacitance increases with the increasing of the temperature under certain gate bias. The sudden increase of the capacitance at 160 K was observed and needeed to be studied further. Meanwhile the capacitance decreased as the frequency increased with first order exponential decay fitting.