Intrinsic Ferromagnetic Janus Cr2pas Monolayer with High Curie Temperature and Controllable Magnetic Anisotropy

Two-dimensional (2D) intrinsic ferromagnetic semiconductors with high Curie temperature and large magnetic anisotropic energy are promising candidates for the development of high-performance spintronic nanodevices. Based on first-principles calculations, we report a new tetragonal Janus Cr 2 PAs monolayer, which is not only dynamically and thermally stable, but also shows robust ferromagnetic semiconducting behavior with a band gap of 0.146 eV. The predicted Curie temperature of Janus Cr 2 PAs monolayer is 794 K. Janus Cr 2 PAs monolayer exhibits an in-plane magnetic anisotropy of -0.260 meV/unit cell, which is mainly donated by As atom of -0.247 meV/As. Remarkably, carrier doping can modulate the magnetic anisotropic of Janus Cr 2 PAs monolayer. The magnetization easy axis of Janus Cr 2 PAs monolayer changes from in-plane to out-of-plane direction with a critical hole doping above -0.6 e/unit cell. The perpendicular magnetic anisotropy increases with the further increase of hole concentration, it reaches up to 0.301 meV/As at concentration of -0.8 e/unit cell. The high Curie temperature and controllable magnetic anisotropy of Janus Cr 2 PAs monolayer make it a promising candidate for 2D spintronic nanodevices