OPTICAL TRANSITION OF POROUS SILICON PREPARED AT DIFFERENT ANODIZATION TEMPERATURES

Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, and Si-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse variations happening at temperature below and above the critical temperature is discussed.

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Year of publication:	2009
Authors:	PAN, LIKUN ; LI, HAIBO ; SUN, ZHUO ; SUN, CHANGQING
Published in:	Surface Review and Letters (SRL). - World Scientific Publishing Co. Pte. Ltd., ISSN 1793-6667. - Vol. 16.2009, 03, p. 351-354
Publisher:	World Scientific Publishing Co. Pte. Ltd.
Subject:	Porous silicon \| anodization temperature \| optical transition

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Extent:	application/pdf text/html
Type of publication:	Article
Source:	RePEc - Research Papers in Economics

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