PREPARATION AND CHARACTERISTICS OF Sm-DOPED Bi2Ti2O7 THIN FILMS

Crack-free Sm-doped Bi2Ti2O7 (Sm:Bi2Ti2O7) thin films with a strong (111) orientation have been prepared on p-Si(111) by chemical solution deposition (CSD). The structural properties and crystallizations were studied by X-ray diffraction. The surface morphology and quality were examined using atomic force microscopy (AFM). The dielectric constant and loss factor at different frequencies were also evaluated at room temperature. Their insulation was studied, too. The films exhibit better insulating property than does the pure Bi2Ti2O7.