Numerical results are presented for the critical exponents at the Anderson metal-insulator transition in three-dimensional disordered systems and two-dimensional systems in the presence of random spin-orbit coupling. The critical exponent v for the localization length and the η exponent describing correlations, the distributions characterising the energy-level statistics in the tight-binding matrix ensembles, and the continuous set of multifractal exponents Dq for the wave function amplitude fluctuations at the mobility edge, are evaluated. A novel technique for scaling full distribution functions is introduced. The method is outlined and the validity of one-parameter scaling theory is discussed in this context. The results are compared, when possible, with field-theoretic calculations in d = 2 + ϵ dimensions.
