SPECIAL SECTION PAPERS - Accelerated Discrete Degradation Models for Leakage Current of Ultra-Thin Gate Oxides
| Year of publication: |
2007
|
|---|---|
| Authors: | Hsieh, M.-H. ; Jeng, S.-L. |
| Published in: |
IEEE transactions on reliability : R ; IEEE T R. - New York, NY, ISSN 0018-9529, ZDB-ID 2416372. - Vol. 56.2007, 3, p. 369-380
|