Spin Separation in Time Dimension for Electron in Magnetically and Electrically Confined Semiconductor Nanostructure

We calculate dwell time of electron in magnetically and electrically confined semiconductor nanostructure (MECSN) that is fabricated in experiments by patterning a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe on the surface of InAs/AlxIn1-xAs. Spin-dependent dwell time is revealed thanks to Zeeman interaction, giving rise to spin separation in time dimension. Properly patterning the SM stripe can obviously enhance electron-spin polarization owing to the SM-stripe dependence of effective potential, achieving tunable temporal spin splitter for semiconductor spintronics