Temperature effect on the electrical properties of undoped and vanadium-doped ZnTe thin films

Vanadium-doped ZnTe films of composition 0 to 10wt%V, were prepared onto glass substrate by e-beam evaporation of the element in vacuum at ∼8×10−4Pa. The effects of various deposition conditions on the electrical properties of the films have been studied in detail. The deposition rate of the ZnTe films was at about 2.05nms−1. X-ray diffraction (XRD) study shows that the as-deposited ZnTe films are amorphous in nature.

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Year of publication:	2008
Authors:	Hossain, M.S. ; Islam, R. ; Khan, K.A.
Published in:	Renewable Energy. - Elsevier, ISSN 0960-1481. - Vol. 33.2008, 4, p. 642-647
Publisher:	Elsevier
Subject:	ZnTe:V thin films \| E-beam technique \| Temperature dependence of resistivity \| Electrical conductivity \| Activation energy \| Thermoelectric power

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Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10011043813