In this paper we deepen the study of a thermodynamical model, based on the extended irreversible thermodynamics with internal variables, for a semiconductor doped by impurities of n type, where we take into consideration the density of holes coming from the intrinsic base of the semiconductor and its flux. Furthermore, taking into account a geometric model developed for n and p type semiconductors in a previous paper, we derive, in the same geometrized framework, the dynamical system on the fibre bundle of the processes for simple material elements of anisotropic n-type semiconductors, the transformation induced by the process, the entropy function and the entropy 1-form. The derivation of the entropy 1-form is the starting point to introduce an extended thermodynamical phase space. Then, we exploit Clausius–Duhem inequality for this medium and using Maugin’s technique we work out the laws of state, the extra entropy flux, the residual dissipation inequality and the heat equation in the first and the second form.
