Ti Doped Sioc Precursor to Activate Gyroid Sensing Structures

Polymer-derived ceramics with rich carbon content has adjustable semiconductive properties by modulation of electron and surface state, promising for sensing application in extreme environments. Their mechanical and chemical stability provide reliable support for their long-term service and safe operation. Ti-doped SiOC (SiTiOC) as a semiconductive and carbon-enriched ceramic is promising for signal detection under harsh conditions. Meanwhile, the polymeric precursor can be modified for 3D printing to fabricate structural-strengthened components. In this work, the precursor of SiTiOC was modified for vat photopolymerization to construct gyroid structures. The designed components were accurately formed with a high resolution up to 120 μm. After the Ti doping, the structures exhibited an optimized conductivity of 1.10 S/m, and their resistance decreased with the increased temperatures, indicating thermistor characteristics with a negative temperature coefficient. They can also detect minor deformation low than 0.5% strain due to their piezoresistive performance, as Ti ions introduced an efficient percolation network by connecting the electrically conductive free carbon. Furthermore, the structures can realize n-butanol sensing for their p-type semiconductor properties. The components also had an excellent mechanical performance with the compressive strength and Young's modulus of 92.83 MPa and 4.28 GPa, respectively, ensuring reliable service under harsh conditions