Validation of an extended hydrodynamic model for a submicron npn bipolar junction transistor

Transport phenomena in a submicron npn silicon bipolar junction transistor are described by using an 8-moment model for the electrons, combined with a solution of the drift–diffusion model for the holes.

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Year of publication:	2006
Authors:	Muscato, Orazio
Published in:	Physica A: Statistical Mechanics and its Applications. - Elsevier, ISSN 0378-4371. - Vol. 365.2006, 2, p. 409-428
Publisher:	Elsevier
Subject:	Theory of electron transport \| Non-equilibrium thermodynamics \| Bipolar transistors

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Type of publication:	Article
Source:	RePEc - Research Papers in Economics

Persistent link: https://www.econbiz.de/10010590344