ZrO2-COATED SiC NANOWIRES PREPARED BY PLASMA-ENHANCED ATOMIC LAYER CHEMICAL VAPOR DEPOSITION

Plasma-enhanced atomic layer deposition (PE-ALCVD) of ZrO2 was performed to coat SiC nanowires and prepare a SiC-ZrO2 core-shell nanowire structure. Zirconium tertiary butoxide (ZTB) and hydrogen plasma pulse cycles were used to grow ZrO2 films. The growth temperature of ZrO2 PE-ALCVD was 150°C with a growth rate of 1.3 Å/cycle. SEM and TEM images showed uniform coating of SiC nanowires with ZrO2. The thickness of ZrO2 coat layer could be controlled by the total number of the pulse cycles. After being annealed at 900°C, a polycrystalline structure of ZrO2 layer was observed.