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Degradation 2 Electron irradiation 2 Solar cell 2 AlxGa1−xAs/GaAs 1 Defects 1 GaAs 1
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Article 3
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Sengouga, N. 3 Khelifi, S. 2 Meftah, A.F. 2 Meftah, A.M. 2 Belghachi, A. 1 Meftah, AF. 1 Meftah, AM. 1
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Renewable Energy 2 Energy conversion and management : ECM 1
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RePEc 2 OLC EcoSci 1
Showing 1 - 3 of 3
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The Al x Ga1− x As window composition effect on the hardness improvement of a p+–n–n+GaAs solar cell exposed to the electron irradiation
Meftah, AF.; Meftah, AM.; Sengouga, N.; Khelifi, S. - In: Energy conversion and management : ECM 51 (2010) 8, pp. 1676-1679
Persistent link: https://www.econbiz.de/10008409610
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Detailed numerical simulation of the effect of defects created by electron irradiation on the performance degradation of a p+–n–n+ GaAs solar cell
Meftah, A.F.; Sengouga, N.; Meftah, A.M.; Belghachi, A. - In: Renewable Energy 34 (2009) 11, pp. 2422-2425
Solar cells exposed to irradiation undergo severe degradation in their performance due to induced structural defects. To predict this effect, the current–voltage characteristics under AM0 illumination for a constant dose of electron irradiation are numerically calculated. From these...
Persistent link: https://www.econbiz.de/10011044616
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Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1−xAs window on the sensitivity of a p+–n–n+ GaAs solar cell to 1MeV electron irradiation
Meftah, A.F.; Sengouga, N.; Meftah, A.M.; Khelifi, S. - In: Renewable Energy 34 (2009) 11, pp. 2426-2431
In this paper numerical simulation has been used to predict the effect of the thickness and aluminium (Al) mole fraction of an AlGaAs layer, used as a window for a p+–n–n+ GaAs solar cell under AM0 illumination and exposed to 1MeV electron irradiation. Such solar cells are used in satellites...
Persistent link: https://www.econbiz.de/10011045331
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