Bellani, V.; Bocchi, C.; Ciabattoni, T.; Franchi, S.; … - In: The European Physical Journal B - Condensed Matter and … 56 (2007) 3, pp. 217-222
This work deals with the strain relaxation mechanism in InGaAs metamorphic buffers (MBs) grown on GaAs substrates and overgrown by InAs quantum dots (QD). The residual strain is measured by using Raman scattering and X-ray diffraction, both in Reciprocal Space Map and in single ω-2θ scan modes...