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61.72.Cc Kinetics of defect formation and annealing
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61.72.S-Impurities in crystals
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61.72.uf Ge and Si
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61.72.uj III–V and II–VI semiconductors
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Levasseur-Smith, K.
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Mousseau, N.
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The European Physical Journal B - Condensed Matter and Complex Systems
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Ab initio study of the diffusion mechanisms of gallium in a silicon matrix
Levasseur-Smith, K.
;
Mousseau, N.
- In:
The European Physical Journal B - Condensed Matter and …
64
(
2008
)
2
,
pp. 165-172
Persistent link: https://www.econbiz.de/10009280510
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