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  • Search: subject:"72.20.-i Conductivity phenomena in semiconductors and insulators"
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72.20.-i Conductivity phenomena in semiconductors and insulators 5 61.80.Fe Electron and positron radiation effects 1 71.23.-k Electronic structure of disordered solids 1 73.20.At Surface states 1 73.40.Gk Tunneling 1 73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator) 1 73.50.Pz Photoconduction and photovoltaic effects 1 73.61.At Metal and metallic alloys 1 73.63.Hs Quantum wells 1 84.32.Ff Conductors 1 85.75.Mm Spin polarized resonant tunnel junctions 1 and photoresistors) 1 band structure 1 electron density of states 1 resistors (including thermistors 1 varistors 1
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Gueorguiev, V. K. 2 Ivanov, Tz. E. 2 Aleksandrova, P. V. 1 Aleskandrova, P. V. 1 Gnanasekar, K. 1 Kaschieva, S. 1 Koprinarova, J. B. 1 Menon, C. S. 1 Navaneethakrishnan, K. 1 Ortuño, M. 1 Prior, J. 1 Somoza, A. M. 1 Varghese, A. C. 1
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The European Physical Journal B - Condensed Matter and Complex Systems 5
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Conductance distribution in two-dimensional localized systems with and without magnetic fields
Prior, J.; Somoza, A. M.; Ortuño, M. - In: The European Physical Journal B - Condensed Matter and … 70 (2009) 4, pp. 513-521
Persistent link: https://www.econbiz.de/10009281476
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Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure
Gnanasekar, K.; Navaneethakrishnan, K. - In: The European Physical Journal B - Condensed Matter and … 53 (2006) 4, pp. 455-461
Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser...
Persistent link: https://www.econbiz.de/10009280014
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Conduction in magnesium phthalocyanine thin films with aluminium electrodes
Varghese, A. C.; Menon, C. S. - In: The European Physical Journal B - Condensed Matter and … 52 (2006) 4, pp. 465-468
The various electrical properties and the nature of conduction mechanisms of magnesium phthalocyanine thin film devices with top and bottom aluminium electrodes have been investigated. The conduction mechanism was identified as injection limited essentially due to the electrode material. Even...
Persistent link: https://www.econbiz.de/10009281715
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Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors
Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; … - In: The European Physical Journal B - Condensed Matter and … 52 (2006) 3, pp. 355-359
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion...
Persistent link: https://www.econbiz.de/10009282910
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Poole-Frenkel conduction in Al/ZrO<Subscript>2</Subscript> <Emphasis Type="Bold">/SiO <Subscript>2</Subscript> <Emphasis Type="Bold">/Si structures
Aleskandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; … - In: The European Physical Journal B - Condensed Matter and … 52 (2006) 4, pp. 453-457
Leakage currents through Al/ZrO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript>/n-Si metal-insulator-semiconductor (MIS) capacitors were studied. Thin SiO<Subscript>2</Subscript> films were chemically grown on monocrystalline phosphorous doped silicon wafers. Zirconia films with thicknesses of 15 and 50 nm were deposited by radio frequency (rf) magnetron...</subscript></subscript></subscript>
Persistent link: https://www.econbiz.de/10009283138
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