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  • Search: subject:"Al0.3Ga0.7N/AlN/GaN"
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Al0.3Ga0.7N/AlN/GaN 1 Al0.3Ga0.7N/GaN 1 electronic parameter 1 electronic structure 1
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CHO, H. I. 1 CHOO, D. C. 1 HAN, S. M. 1 JO, Y. H. 1 JUNG, J. I. 1 JUNG, M. H. 1 KIM, S. Y. 1 KIM, T. W. 1 LEE, J. H. 1 RAM-MOHAN, L. R. 1 YOO, K. H. 1
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Surface Review and Letters (SRL) 1
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ELECTRONIC PARAMETER AND SUBBAND STRUCTURE VARIATIONS DUE TO AN EMBEDDED AlN POTENTIAL BARRIER LAYER IN Al0.3Ga0.7N/GaN HETEROSTRUCTURES
HAN, S. M.; KIM, S. Y.; CHOO, D. C.; JUNG, J. I.; KIM, T. W. - In: Surface Review and Letters (SRL) 14 (2007) 04, pp. 807-811
Carrier density of a two-dimensional electron gas (2DEG) in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures …. The carrier densities of the 2DEGs in the Al0.3Ga0.7N/AlN/GaN and the Al0.3Ga0.7N/GaN heterostructures at 1.5 K …/GaN heterostructure. The electronic subband energies, the wave functions, and the Fermi energies in the Al0.3Ga0.7N/AlN/GaN and Al0.3Ga0 …
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