Ungersboeck, E.; Gös, W.; Dhar, S.; Kosina, H.; … - In: Mathematics and Computers in Simulation (MATCOM) 79 (2008) 4, pp. 1071-1077
The band structure of silicon (Si) under arbitrary stress/strain conditions is calculated using the empirical nonlocal pseudopotential method. The method is discussed with a special focus on the strain induced breaking of crystal symmetry. It is demonstrated that under general stress the...