Search Results - subject:"Grain boundaries"

Fluctuations in molecular dynamics simulations

Hoyt, J.J.; Trautt, Z.T.; Upmanyu, M. - In: Mathematics and Computers in Simulation (MATCOM) 80 (2010) 7, pp. 1382-1392

grain boundaries, as well as the solid–liquid interfacial free energy and its small anisotropy. Second, both a random walk … utilized to derive the mobility of grain boundaries and crystal–melt interfaces. Finally, the probability distribution of …

Persistent link: https://www.econbiz.de/10010870455

IRRADIATION EFFECTS ON MICROSTRUCTURE AND TENSILE BEHAVIOR OF POLYCRYSTALLINE NICKEL

GHAURI, I. M.; AFZAL, NAVEED; RAZA, M. AKRAM - In: Surface Review and Letters (SRL) 14 (2007) 06, pp. 1199-1203

. The damage was found to be more prominent at the grain boundaries. The tensile tests of both unirradiated and irradiated …

Persistent link: https://www.econbiz.de/10005080539

Interfaces and grain boundaries of lamellar phases

Villain-Guillot, S; Netz, Roland R; Andelman, David; … - In: Physica A: Statistical Mechanics and its Applications 249 (1998) 1, pp. 285-292

Interfaces between lamellar and disordered phases, and grain boundaries within lamellar phases, are investigated …

Persistent link: https://www.econbiz.de/10010874335

The thermoelectric power, the dark electrical resistivity and the grain boundary potential barrier in CdIn2Se4 thin films

Abdel Hady, D.; El-Shazly, A.A.; Soliman, H.S.; … - In: Physica A: Statistical Mechanics and its Applications 226 (1996) 3, pp. 324-329

The thermoelectric power (Seebeck coefficient S) was measured for several preannealed CdIn2Se4 thin films of different thicknesses. The thermoelectric power measurements indicate that the preannealed CdIn2Se4 thin films are n-type semiconductors. The thermoelectric was utilized to calculate the...

Persistent link: https://www.econbiz.de/10010586807