SELLAI, A.; DAWSON, P. - In: Surface Review and Letters (SRL) 13 (2006) 02, pp. 273-278
To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400°C to 700°C) to form PtSi. The PtSi/n-Si diodes,...