Search Results - subject:"InP"

Optical properties of Sulfur doped InP single crystals

El-Nahass, M.M.; Youssef, S.B.; Ali, H.A.M. - In: Physica A: Statistical Mechanics and its Applications 402 (2014) C, pp. 216-223

Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral … range of 200–2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals …

Persistent link: https://www.econbiz.de/10011060155

STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

GHAFFOUR, M.; ABDELLAOUI, A.; BOUSLAMA, M.; OUERDANE, A.; … - In: Surface Review and Letters (SRL) 19 (2012) 01, pp. 1250002-1

compounds InP, InSb, InPO4 and InxGa1-xAs. The III–V semiconductors InP and InSb seem to be sensitive to the electron … substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural … change of the surface, so that there is breaking of chemical bonds between indium and phosphorus (In–P) and formation of new …

Persistent link: https://www.econbiz.de/10011011212

Numerical challenges in particle-based approaches for the simulation of semiconductor devices

Saraniti, M.; Tang, J.; Goodnick, S.M.; Wigger, S.J. - In: Mathematics and Computers in Simulation (MATCOM) 62 (2003) 3, pp. 501-508

The aim of this paper is to review and discuss the most challenging aspects of the particle-based methods for simulation of charge transport in semiconductor devices. Since the early theoretical works on the Ensemble Monte Carlo (EMC) method applied to device simulation, and several successive...

Persistent link: https://www.econbiz.de/10010750102