GHAFFOUR, M.; ABDELLAOUI, A.; BOUSLAMA, M.; OUERDANE, A.; … - In: Surface Review and Letters (SRL) 19 (2012) 01, pp. 1250002-1
compounds InP, InSb, InPO4 and InxGa1-xAs. The III–V semiconductors InP and InSb seem to be sensitive to the electron … AES and EELS spectroscopy are also used to characterize the oxide InPO4 whose thickness is about 10 Å grown on the … substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural …
