Strong oscillations on capacitance and conductance have been observed in p-type Hg<Subscript>0.8</Subscript>Zn<Subscript>0.2</Subscript>Te metal-insulator-semiconductor structures, made by using a recent process for the interface passivation. This behaviour is attributed to a two-dimensional electron gas in the n-inversion layer and the...</subscript></subscript>

We report the inclusion of temperature effects on the Mahan-Nozières-De Dominicis framework to study both many-body and temperature effects in photoluminescence spectra of doped semiconductors. The electronic part of the correlation function characterizes the photoluminescence spectra. We have...

In the asymptotic limit, the interlayer exchange coupling decays as D <Superscript>−2</Superscript>, where D is the spacer thickness. A systematic procedure for calculating the preasymptotic corrections, i.e., the terms of order D <Superscript>−n </Superscript> with n ≥ 3, is presented. The temperature dependence of the preasymptotic...</superscript></superscript>

We present investigations of the electronic and magnetic structure of the Rare Earth valence states. In particular, we have examined ultra thin films (≤ 10 ML) of the rare earth metals gadolinium and neodymium epitaxially grown on tungsten (110). Various experiments on dichroism in angular...

A model study of the characteristic signatures of carrier-correlation effects on the excitonic differential absorption spectra in semiconductors is presented. Using an effectively one-dimensional tight-binding system Coulomb-induced carrier-correlations up to third-order in the optical field are...

Using the bosonization technique, a theory for the collective excitations of the interacting electrons in quantum wires with two subbands occupied is developed. The dispersion relations for the inter-subband charge and spin density excitations are determined. The results are used to interpret...