NAITOH, M.; OKANO, M.; KITADA, Y.; SASAKI, Y.; OKUBO, Y.; … - In: Surface Review and Letters (SRL) 18 (2011) 05, pp. 163-167
We used scanning tunneling microscopy to investigate graphene formation on an SiC-on-insulator (SiC-OI) substrate. Annealing of an SiC-OI substrate with an SiC thickness of 1500 nm produced a graphene layer on the SiC surface. When the thickness of the SiC film was 5 nm, a graphene layer was not...
