Ibáñez, M.J.; Roldán, J.B.; Roldán, A.M.; Yáñez, R. - In: Mathematics and Computers in Simulation (MATCOM) 102 (2014) C, pp. 1-10
In this work we propose a method to obtain the MOSFET transistor threshold voltage, which is known to be an essential magnitude from the modeling viewpoint. Generally, there are a large number N of experimental data, and the use of smoothing splines leads to resolution of linear systems of size...