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Frequency domain 1 MOSFET compact model 1 Non-quasi-static effect 1 Surface potential 1 Surface-potential 1 Time domain 1 atomic force microscopy 1 graphite 1 potential well model 1 tunneling 1
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Article 2
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CUI, Y. L. 1 Ezaki, T. 1 Iizuka, T. 1 Kumashiro, S. 1 LI, B. H. 1 LI, L. X. 1 LIU, R. P. 1 Mattausch, H.J. 1 Miura-Mattausch, M. 1 Miyamoto, S. 1 Navarro, D. 1 Ohguro, T. 1 SONG, H. W. 1 Sadachika, N. 1 Suzuki, G. 1 Taguchi, M. 1 Takeda, Y. 1 ZHANG, D. T. 1 ZHANG, P. F. 1
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Mathematics and Computers in Simulation (MATCOM) 1 Surface Review and Letters (SRL) 1
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Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations
Ezaki, T.; Navarro, D.; Takeda, Y.; Sadachika, N.; … - In: Mathematics and Computers in Simulation (MATCOM) 79 (2008) 4, pp. 1096-1106
We develop a non-quasi-static MOSFET compact model suitable for simulating RF circuits operating under GHz frequency. The model takes into account the carrier dynamics by incorporating the time delay for the carriers to form a channel. Both the time-domain and frequency-domain expressions are...
Persistent link: https://www.econbiz.de/10010749047
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MODEL OF THE POTENTIAL BARRIER OUTSIDE THE SURFACE OF A CONDUCTOR WITH WALLS OF FINITE THICKNESS
LI, L. X.; LIU, R. P.; ZHANG, D. T.; LI, B. H.; CUI, Y. L. - In: Surface Review and Letters (SRL) 14 (2007) 05, pp. 963-967
Tunneling effect of graphite is studied by atomic force microscopy. The tunneling current in the gap between a conductive tip and a newly cleaved graphite surface at a given voltage keeps almost constant when the gap-distance varies within 1 μm, which cannot be explained by the commonly...
Persistent link: https://www.econbiz.de/10005080584
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