Plasma-enhanced atomic layer deposition (PE-ALCVD) of ZrO2 was performed to coat SiC nanowires and prepare a SiC-ZrO2 core-shell nanowire structure. Zirconium tertiary butoxide (ZTB) and hydrogen plasma pulse cycles were used to grow ZrO2 films. The growth temperature of ZrO2 PE-ALCVD was 150°C...