MESLI, M. N.; BENBAHI, B.; BOUAFIA, H.; BELMEKKI, M.; … - In: Surface Review and Letters (SRL) 20 (2013) 03, pp. 1350038-1
The aim of our investigation is focused on studying the effect of dopant dose loss during annealing treatments on heavily doped surface layers, obtained by recoil implantation of antimony in silicon. We are interested particularly by the increase of sheet resistance consequently to the shallow...