As the carbon nanotubes (CNTs) films are applied to the field emission cathodes in the vacuum devices, heat treatment in the range of 400°C–500°C is often conducted during the device sealing process, especially for glass-based devices. The annealing temperature effect on the field emission...

Electrosorption of carbon nanotube and nanofiber (CNT–CNF) composite film electrodes was studied as a new desalination technology. The CNT–CNF composite film electrodes were grown on nickel sheets by low pressure thermal chemical vapor deposition. Different growth conditions at different...

A simple and hydrazine-free solution-based approach for depositing Cu2ZnSnS4 (CZTS) and Cu2ZnSn(S,Se)4 (CZTSSe) absorber layers is reported. The process involves incorporating metal salts (Cu(CH3COO)2, Zn(CH3COO)2, SnCl2) and thiourea into a single pyridine-based solution, spin-coating a...

The effect of annealing temperature on the magnetic and giant magnetostriction (GMS) of [Fe/Tb/Fe/Dy]n multilayer films were investigated. X-ray diffraction showed that the multilayer films' microstructures were still in amorphous at annealing temperature 300°C. The multilayer films began to...

Single-phase CuInSe2 films were grown by high vapor selenization of CuIn alloy precursors within a partially closed graphite box. The CuIn precursors were prepared using CuxIny alloy targets with different composition rates under low vacuum level by a homemade sputtering system. The Cu and In...

An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide (ZnS) thin films on glass substrates deposited at 80–82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both...

A simply modified bath deposition technique has been successfully used to deposit uniform CdS thin films using cadmium chloride or cadmium acetate as the cadmium ion source, and thiourea as the sulfur source on glass substrates. Both the traditional magnetic agitation and the frequent substrate...

Copper indium diselenide (CuInSe2) thin films were grown on indium–tin oxide (ITO)/soda-lime glass using a one-step cathodic electrodeposition process at potentials lower than -0.6 V vs SCE, and in the presence of a large excess of In3+. The source solution contained CuCl2, InCl3, and H2SeO3...

Intrinsic zinc oxide (i-ZnO) film was prepared for CuInSe2 (CIS) solar cell application [L. Stolt and J. Hedstrom, Appl. Phys. Lett. 62 (1993) 8; D. Rudmann, Ph.D. Thesis, University of Basel, Basel, (2004)] on glass substrate by inductively coupled plasma (ICP)-assisted DC magnetron sputtering...

Indium tin oxide (ITO) thin films were prepared by radio frequency (RF) magnetron sputtering and under a quite low vacuum level of 2.3 × 10-3 Pa. The sputtering was done in an Ar and O2 gas mixture at a temperature of 200°C. A ceramic In2O3:SnO2 target (10 wt% SnO2) was used. The...