KIM, JAEHYUN; YONG, KIJUNG - In: Surface Review and Letters (SRL) 13 (2006) 05, pp. 567-571
Zirconium silicate (ZrxSi1-xO2) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200–300°C was used to deposit films with uniform thickness. The grown...
