Plasma-enhanced atomic layer deposition (PE-ALCVD) of ZrO2 was performed to coat SiC nanowires and prepare a SiC-ZrO2 core-shell nanowire structure. Zirconium tertiary butoxide (ZTB) and hydrogen plasma pulse cycles were used to grow ZrO2 films. The growth temperature of ZrO2 PE-ALCVD was 150°C...

Evolution of morphology change was investigated for ZnO nanoneedle array grown by low-temperature MOCVD. Well-aligned ZnO nanoneedle array was deposited on the ZnO buffer-film/Si substrate at temperatures below 500°C. A rod-shaped ZnO nanowire in the initial growth stage changed into...

Zirconium silicate (ZrxSi1-xO2) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200–300°C was used to deposit films with uniform thickness. The grown...

Titanium silicate thin films were deposited using self-limiting atomic layer growth technique. Grown films showed smooth film surface morphology. As deposited, 8 nm-thick film surface showed an RMS value of 0.43 nm and annealed film showed a smoother surface having RMS of 0.2 nm. Electrical...