Plasma-enhanced atomic layer deposition (PE-ALCVD) of ZrO2 was performed to coat SiC nanowires and prepare a SiC-ZrO2 core-shell nanowire structure. Zirconium tertiary butoxide (ZTB) and hydrogen plasma pulse cycles were used to grow ZrO2 films. The growth temperature of ZrO2 PE-ALCVD was 150°C...

Zirconium silicate (ZrxSi1-xO2) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200–300°C was used to deposit films with uniform thickness. The grown...

A new method is developed to obtain crystalline nanorods of WO3 using tungsten organometallic compound, tungsten hexacarbonyl, at a low temperature of around 700°C. The diameters of the nanorods were in the range of 20–50 nm, and their lengths were up to several micrometers. The WO3 nanorods...

Titanium silicate thin films were deposited using self-limiting atomic layer growth technique. Grown films showed smooth film surface morphology. As deposited, 8 nm-thick film surface showed an RMS value of 0.43 nm and annealed film showed a smoother surface having RMS of 0.2 nm. Electrical...