Strong oscillations on capacitance and conductance have been observed in p-type Hg<Subscript>0.8</Subscript>Zn<Subscript>0.2</Subscript>Te metal-insulator-semiconductor structures, made by using a recent process for the interface passivation. This behaviour is attributed to a two-dimensional electron gas in the n-inversion layer and the...</subscript></subscript>

In the asymptotic limit, the interlayer exchange coupling decays as D <Superscript>−2</Superscript>, where D is the spacer thickness. A systematic procedure for calculating the preasymptotic corrections, i.e., the terms of order D <Superscript>−n </Superscript> with n ≥ 3, is presented. The temperature dependence of the preasymptotic...</superscript></superscript>

The optical properties of the quarter-filled single-band CDW systems have been reexamined in the model with the electron-phonon coupling related to the variations of electron site energies. It appears that the indirect, electron-mediated coupling between phase phonons and external...

We have studied RMnO<Subscript>3</Subscript> manganites (R=Pr, Sm, Eu, Tb, Y) Raman excitations in the 200–2800 cm<Superscript>-1</Superscript> range as a function of temperature. Combinations of phonon energies are observed up to the fourth order, indicating the presence of electron-phonon coupling. In comparison to Γ-point phonon...</superscript></subscript>