We present a numerical study of the evolution of a wave packet in a nanoscale MOSFET featuring an ‘atomistic’ channel doping. Our two-dimensional Monte Carlo Wigner simulation results are compared against classical Boltzmann simulation results. We show that the quantum effects due to the...

The capability of manipulating single dopant atoms in semiconductor materials, with atomic precision, has given birth to a new branch of electronics known as solotronics (solitary dopant optoelectronics). While experiments are advancing rapidly, the theoretical comprehension of quantum phenomena...

We study the evolution of a Gaussian wave packet in the presence of the ordered and disordered arrays of dopants, described by means of Coulombic potentials. As a first step, we investigate the dynamics of the packet in three different ordered configurations consisting of two, three and...

In Monte Carlo (MC) simulations of semiconductor devices it is necessary to enhance the statistics in sparsely populated regions of interest. In this work the Monte Carlo method for stationary carrier transport, known as the Single-Particle MC method, is considered. It gives a solution to the...

The stochastic method used to simulate the stationary transport in semiconductor devices is revised in terms of the numerical Monte Carlo theory. A mathematically based approach has been used to derive the basic simulation algorithms, previously devised from physical considerations. The approach...

We consider the convergency of the basic Monte Carlo (MC) algorithms for solving the Boltzmann transport equation (BTE). It is a linear kinetic equation describing a broad class of particle transport phenomena such as electron and neutron transport, radiative transfer, medium energy electron and...

In this work a Monte Carlo approach to the electron-phonon quantum transport is presented and studied. It is shown that the Monte Carlo method can be applied for solving quantum transport equations. Numerical results are also presented

The band structure of silicon (Si) under arbitrary stress/strain conditions is calculated using the empirical nonlocal pseudopotential method. The method is discussed with a special focus on the strain induced breaking of crystal symmetry. It is demonstrated that under general stress the...

A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green’s function (NEGF) formalism. The effects of...

The femtosecond dynamics of highly non-equilibrium, confined carriers is analyzed within a Monte Carlo approach. The physical process considered corresponds to a locally excited or injected into a semiconductor nanowire distribution of heated carriers, which evolve under the action of an applied...