HE, BO; XU, JING; XING, HUAIZHONG; WANG, CHUNRUI; GUO, YING - In: Surface Review and Letters (SRL) 20 (2013) 05, pp. 1350052-1
Thin film of tin oxide (SnO2) was prepared on p-type polished silicon wafer by ultrasonic spray pyrolysis technique using SnCl4 precursor solution to fabricate nanospherical n-SnO2/p-Si heterojunction photoelectric device. Deposition of film was achieved at 400°C substrate temperature. The...
