Nitrogenated diamond-like carbon films have been deposited on glass and p-type Si (100) substrates by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (PECVD) with a frequency of 13.56 MHz at room temperature using CH4 as precursor of carbon source and H2 as a carrier gas. The...

We have studied the influence of the methane gas (CH4) flow rate on the composition and structural and electrical properties of nitrogenated amorphous carbon (a-C:N) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy, X-ray...

Amorphous carbon nitride (a-CNx) films were deposited on quartz substrates by newly developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD) of alcohol camphoric carbon plasma source at room temperature. Then the a-CNx films were heat-treated at various annealing temperatures...

Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition (SWMP-CVD) technique at low temperatures (100°C). We used argon (Ar), camphor dissolved in alcohol, and nitrogen (N) as carrier, source,...

The tetrahedral carbon (ta-C) and boron doped amorphous carbon (a-C:B) thin films have been grown by pulsed laser deposition. The respective effects of diamond percentages by weight in the target (Dwt%) and boron percentages by weight in the camphoric carbon target (Bwt%), on the tetrahedral...

The effect of boron weight percentage in the camphoric carbon target of pulsed laser deposition on the preparation of boron-doped amorphous carbon (a-C:B) films has been studied using standard measurement techniques. XPS results showed the a-C:B films bonding properties almost unchanged at lower...

The transparent c-axis oriented ZnO thin films have been prepared by sol–gel method using zinc acetate as cations source, 2-mrthoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip coating technique at a withdrawal rate of 10 mm/min on quartz and...

Surface morphology, deposition rate, bonding composition, structural, optical and electrical properties of XeCl excimer pulsed laser deposited amorphous carbon nitride (a-CNx) films using camphoric carbon (C10H16O) target in 0.8 Torr nitrogen (N) gas ambient as a function of laser fluences (LF)...

This paper reports on the successful deposition of phosphorus (P)-doped n-type (p-C:P) carbon (C) films, and fabrication of n-C:P/p-Si cells by pulsed laser deposition (PLD) using graphite target at room temperature. The cells performances have been given in the dark I–V rectifying curve and...

The properties and optical band gap excitation of nanoporous titanium dioxide (TiO2) and transparent semiconducting copper iodide (CuI) films prepared by a XeCl excimer laser were investigated. The CuI films exhibited optical transmittance over 80% in the wavelength range from 400 to 900 nm with...